Infineon CoolGaN™: High-Efficiency Transistors with Voltage Ratings from 60 V to 700 V

Infineon CoolGaN™: High-Efficiency Transistors with Voltage Ratings from 60 V to 700 V

Boardesign, 09/04/25

In a recent deep-dive article we saw that the evolution of power devices is driven by the pursuit of greater efficiency, power density and reliability. Wide-bandgap materials such as SiC and GaN will play an increasingly important role in the future of power electronics, enabling more compact, efficient and high-performing systems across a wide range of applications. On that note, Infineon Technologies has recently announced important additions to its CoolGaN™ G5 transistor line, introducing devices that integrate a Schottky diode to improve the efficiency of industrial power systems.

CoolGaN™ G5: Key Technical Features

The 650 V CoolGaN™ G5 transistors are e-mode (normally-off) devices designed to operate at high frequency with high efficiency. Their main features include:

• Ultra-fast switching with gate charge (Qg) and output charge (Qoss) reduced by up to 60% compared to previous generations.
• No reverse recovery charge, enabling efficient reverse conduction.
• High ESD robustness: 2 kV HBM and 1 kV CDM.
• Availability in various SMD packages, including TOLL, TOLT, DFN 8×8 and ThinPAK 5×6, with both top-side and bottom-side cooling.
• JEDEC certification (JESD47, JESD22).

These devices are ideal for applications such as switched-mode power supplies (SMPS), telecommunications, data centers, renewable energy and motor drives.

Schottky Diode Integration: An Innovation for Efficiency

One of the most significant innovations is the integration of a Schottky diode directly into the GaN transistor. This approach addresses the reverse-conduction losses typical of GaN devices, especially in hard-switching applications with extended dead times. The integration simplifies power stage design, reduces bill-of-materials (BOM) cost and improves overall system efficiency.

The first device in this series is a 100 V transistor with an Rds(on) of 1.5 mΩ, available in a 3×5 mm PQFN package. This innovative approach also offers better compatibility with high-side gate drivers and controllers, further simplifying the design of power systems.

Production and Availability

The CoolGaN™ G5 transistors are produced on 8-inch lines at the Villach (Austria) and Kulim (Malaysia) plants, with plans to expand to 12-inch wafers to increase production capacity and ensure a robust supply chain.

Engineering samples are already available, with volume production expected shortly. For more information and to order the devices, visit Infineon’s official website.

With these innovations, Infineon strengthens its position in the wide-bandgap semiconductor market, offering solutions that combine efficiency, power density and ease of integration for a wide range of industrial applications.